Understanding Hafnium Oxide-Based Ferroelectrics for an Improved Reliability in Non-Volatile Memory Applications

For the computer architecture most are familiar with—called von Neumann architecture—three memory technologies have the strongest foothold due to their relation between performance and affordability. These are SRAM, DRAM, and NAND flash. Nevertheless, in order to achieve further optimization, it has become necessary, now more than ever, to look into alternative or emerging memories to potentially improve the overall efficiency of this well-established architecture. Among emerging memory technologies, ferroelectric memory—based on the unique non-volatile property of ferroelectric materials—offers promising benefits. Though not new, its current development focuses on improving performance through novel materials like hafnium oxide-based ferroelectrics. This work aims to explore said materials regarding their principles, performance, and advancements for ferroelectric memory, highlighting their potential role in helping meet current and future computing demands.